Mask pattern

ABSTRACT

A mask pattern for forming the semiconductor structure is provided. The mask pattern includes a first mask pattern and a second mask pattern. The first mask pattern includes a plurality of first target patterns, and the plurality of first target patterns are arranged along a first direction. The second mask pattern includes a plurality of second target patterns, and the plurality of second target patterns are arranged along the first direction. When the first mask pattern overlaps the second mask pattern, one of the plurality of first target patterns partially overlaps a corresponding one of the plurality of second target patterns.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. patent application Ser. No.17/036,691, filed on Sep. 29, 2020, which claims the priority of Chinesepatent application No. 202010010444.9, filed on Jan. 6, 2020, theentirety of all of which is incorporated herein by reference.

FIELD OF THE DISCLOSURE

The present disclosure generally relates to the field of semiconductormanufacturing technology and, more particularly, relates to a maskpattern, a semiconductor structure and a fabrication method thereof.

BACKGROUND

With the development of very large-scale integrated circuits, devicedesign dimensions are getting smaller and smaller, and changes in devicecritical dimensions (CD) have more and more influence on deviceperformance. For example, change in critical dimensions of a gatestructure directly leads to changes in device operating speed.

Photolithography is vital technology in semiconductor manufacturingtechnology. Photolithography can achieve the transfer of a pattern froma mask to a surface of silicon wafer, to form a semiconductor productthat meets the design requirements. The photolithography processincludes an exposure step, a development step performed after performingthe exposure step, and an etching step performed after performing thedevelopment step.

In the exposure step, light is irradiated onto the silicon wafer coatedwith photoresist through a light-transmitting region in the mask, andthe photoresist undergoes chemical reactions under the irradiation ofthe light. In the development step, because the irradiated andnon-irradiated photoresist has different dissolution degree in thedeveloper, a photolithography pattern is formed to transfer the maskpattern to the photoresist layer. In the etching step, based on thephotolithography pattern formed in the photoresist layer, the siliconwafer is etched to further transfer the mask pattern to the siliconwafer.

Usually, a single exposure process and a single etching process can meetthe requirements of forming a device with a substantially large criticaldimension. When the critical dimension is substantially small, aself-aligned multiple patterning technology needs to be configured tomeet the device size requirements.

However, in a case where both large and small critical dimensions needto be formed at the same time, when designing the mask pattern, thepattern density is not enough to meet the requirements of forming thedevice with a substantially small critical dimension. The disclosedmethods and device structures are directed to solve one or more problemsset forth above and other problems.

BRIEF SUMMARY OF THE DISCLOSURE

One aspect of the present disclosure includes a mask pattern. The maskpattern includes a first mask pattern and a second mask pattern. Thefirst mask pattern includes a plurality of first target patterns, andthe plurality of first target patterns are arranged along a firstdirection. The second mask pattern includes a plurality of second targetpatterns, and the plurality of second target patterns are arranged alongthe first direction. When the first mask pattern overlaps the secondmask pattern, one of the plurality of first target patterns partiallyoverlaps a corresponding one of the plurality of second target patterns.

Optionally, along the first direction, each first target pattern has afirst size, and adjacent two first target patterns are separated by afirst distance.

Optionally, along the first direction, each second target pattern has asecond size, and adjacent two second target patterns are separated by asecond distance.

Optionally, along the first direction, the second size is in a range ofapproximately 45 nm-60 nm, and the first size is in a range ofapproximately 25 nm-45 nm.

Optionally, along the first direction, the second size is in a range ofapproximately 100 nm-200 nm, and the first size is in a range ofapproximately 100 nm-200 nm.

Optionally, along the first direction, a ratio of a size of overlappedportion of the second target pattern with the first target pattern overthe first size is in a range of approximately 40%-60%, and a ratio of asize of non-overlapped portion of the second target pattern with thefirst target pattern over the first distance is in a range ofapproximately 40%-60%.

Optionally, along the first direction, the size of the overlappedportion of the second target pattern with the first target pattern isapproximately ½ of the first size, and the size of the non-overlappedportion of the second target pattern with the first target pattern isapproximately ½ of the first distance.

Optionally, the first mask pattern further includes a plurality of firstmain target patterns, and the plurality of first main target patternsare arranged along the first direction.

Optionally, the second mask pattern further includes a plurality ofsecond main target patterns, and the plurality of second main targetpatterns are arranged along the first direction.

Another aspect of the present disclosure includes a method for forming asemiconductor structure. The method includes providing a substrate;forming a sacrificial film on the substrate; and providing a maskpattern. The mask pattern includes a first mask pattern and a secondmask pattern. The first mask pattern includes a plurality of firsttarget patterns, and the plurality of first target patterns are arrangedalong a first direction. The second mask pattern includes a plurality ofsecond target patterns, and the plurality of second target patterns arearranged along the first direction. When the first mask pattern overlapsthe second mask pattern, one of the plurality of first target patternspartially overlaps a corresponding one of the plurality of second targetpatterns. The method also includes performing a first patterning processon the sacrificial film using the second mask pattern as a mask to forma plurality of discretely arranged sacrificial layers, where positionand size of the plurality of sacrificial layers correspond to positionand size of the plurality of second target patterns. In addition, themethod includes forming a sidewall spacer on a sidewall surface of asacrificial layer of the plurality of sacrificial layers; after formingthe sidewall spacer, removing the plurality of sacrificial layers; andafter removing the plurality of sacrificial layers, forming a mask layeron a surface of the substrate and on top and sidewall surfaces of thesidewall spacer. Further, the method includes performing a secondpatterning process on the mask layer using the first mask pattern as amask to form a plurality of discretely arranged mask structures, whereposition and size of the plurality of mask structures correspond toposition and size of the plurality of first target patterns.

Optionally, a mask structure covers at least one sidewall spacer; and atleast one sidewall spacer is located between adjacent mask structures.

Optionally, forming the sidewall spacer includes: forming a sidewallspacer material film on the surface of the substrate and on top andsidewall surfaces of the sacrificial layer; and back-etching thesidewall spacer material film until the surface of the substrate and thetop surface of the sacrificial layer are exposed, to form the sidewallspacer on the sidewall surface of the sacrificial layer.

Optionally, performing the first patterning process on the sacrificialfilm using the second mask pattern as a mask includes: forming a firstphotoresist on a surface of the sacrificial film; performing an exposureprocess on the first photoresist using the second mask pattern as a maskto form an initial first patterned layer; performing a developmentprocess on the initial first patterned layer to form a first patternedlayer; and performing an etching process on the sacrificial film usingthe first patterned layer as a mask until the surface of the substrateis exposed to form the plurality of sacrificial layers.

Optionally, the sacrificial layer is made of a material includingamorphous silicon, amorphous carbon, polysilicon, silicon oxide, siliconoxy-carbide, silicon oxy-carbo-nitride, or a combination thereof.

Optionally, performing the second patterning process on the mask layerusing the first mask pattern as a mask includes: forming a secondphotoresist on the mask layer; performing an exposure process on thesecond photoresist using the first mask pattern as a mask to form aninitial second patterned layer; performing a development process on theinitial second patterned layer to form a second patterned layer; andetching the mask layer using the second patterned layer as a mask untilthe surface of the substrate is exposed to form the plurality of maskstructures.

Optionally, the mask layer is made of a material different from thesidewall spacer; and the sidewall spacer is made of a material includingsilicon oxide, titanium dioxide, silicon nitride, silicon carbo-nitride,silicon boron-nitride, silicon oxy-carbo-nitride, silicon oxynitride, ora combination thereof.

Optionally, the mask layer is made of a material including photoresistor an organic material containing carbon and oxygen.

Optionally, a top surface of the mask layer is above or coplanar with atop surface of the sidewall spacer.

Optionally, the method further includes using a mask structure and thesidewall spacer as a mask, etching the substrate.

Another aspect of the present disclosure includes a semiconductorstructure formed by any one of the disclosed methods.

The disclosed embodiments may have following beneficial effects. Thepresent disclosure provides a mask pattern. The first mask pattern maybe configured to perform a single exposure process and a single etchingprocess to form a device with a substantially large critical dimension.The second mask pattern may be configured to perform a self-alignedmultiple patterning process to form a device with a substantially smallcritical dimension. Because one first target pattern partially overlapscorresponding one second target pattern along the first direction, thespace may be fully utilized. Therefore, while satisfying that theplurality of first target patterns in the first mask pattern have adesired pattern density, the plurality of second target patterns in thesecond mask pattern may also have desired pattern density.

Because the ratio of the size of the overlapped portion of the secondtarget pattern with the first target pattern over the first size is in arange of approximately 40%-60%, and the ratio of the size thenon-overlapped portion of the second target pattern with the firsttarget pattern over the first distance is in a range of approximately40%-60%, the second mask pattern may be subsequently used to perform aself-aligned multiple patterning process to form a sidewall spacer, andthe first mask pattern may be configured to perform a single exposureprocess and a single etching process to form a mask structure.Therefore, a first portion of sidewall spacers may be located betweenadjacent mask structures, and a second portion of the sidewall spacersmay overlap the mask structure. In other words, a projection of one ofthe second portion of the sidewall spacers on the substrate may belocated within a projection of a corresponding mask structure on thesubstrate.

At the same time, the second mask pattern may have a desired patterndensity, and the first mask pattern may have a desired pattern density.The second mask pattern may be configured to perform a first patterningprocess, the first mask pattern may be configured to perform a secondpatterning process, and, thus, the formed structure may have a desiredpattern density. The sidewall spacer located between adjacent maskstructures may be ultimately transferred to the substrate to form adevice with a substantially small critical dimension and desireduniformity. The sidewall spacer overlapped with the mask structure maybe ultimately transferred to the substrate using the mask structure as amask, to form a device with a substantially large critical dimension anddesired uniformity.

In the disclosed method for forming the semiconductor structure, becausethe first mask pattern has a desired pattern density, the secondpatterning process performed with the first mask pattern may havedesired stability and may produce substantially few defects, such thatthe formed pattern may have desired uniformity. Because the second maskpattern has desired pattern density, the first patterning processperformed with the second mask pattern may have desired stability andmay produce substantially few defects, such that the formed pattern mayhave desired uniformity. Therefore, the formed semiconductor structuremay have desired device performance.

Other aspects of the present disclosure can be understood by thoseskilled in the art in light of the description, the claims, and thedrawings of the present disclosure.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a schematic structural diagram of a mask pattern;

FIG. 2 illustrates a schematic structural diagram of another maskpattern;

FIG. 3 illustrates a schematic structural diagram of a mask patternconsistent with various disclosed embodiments of the present disclosure;

FIGS. 4-12 illustrate semiconductor structures corresponding to certainstages for forming an exemplary semiconductor structure consistent withvarious disclosed embodiments of the present disclosure; and

FIG. 13 illustrates a flowchart of an exemplary method for forming asemiconductor structure consistent with various disclosed embodiments ofthe present disclosure.

DETAILED DESCRIPTION

Reference will now be made in detail to exemplary embodiments of thedisclosure, which are illustrated in the accompanying drawings. Whereverpossible, the same reference numbers will be used throughout thedrawings to refer to the same or the alike parts.

FIG. 1 illustrates a schematic structural diagram of a mask pattern.Referring to FIG. 1, a mask pattern 100 includes a plurality of firsttarget patterns 110, and the plurality of first target patterns 110 arearranged along a first direction X.

The mask pattern 100 is used to perform a single exposure process and asingle etching process, to form a device with a substantially largefeature dimension. To simultaneously form a device with a substantiallysmall feature dimension, another mask pattern is designed on the basisof the mask pattern 100, which will be described in detail below inconjunction with the accompanying drawings.

FIG. 2 illustrates a schematic structural diagram of another maskpattern. Referring to FIG. 2, a mask pattern includes a first maskpattern 120 and a second mask pattern 130. The first mask pattern 120includes a plurality of first target patterns 121, and the plurality offirst target patterns 121 are arranged along the first direction X. Thesecond mask pattern 130 includes a plurality of second target patterns131, and the plurality of second target patterns 131 are arranged alongthe first direction X. The second target pattern 131 does not overlapthe first target pattern 121.

The first mask pattern 120 is used to perform a single exposure processand a single etching process to form a device with a substantially largecritical dimension. The second mask pattern 130 is used to perform aself-aligned multiple patterning process to form a device with asubstantially small critical dimension. Therefore, process requirementsfor forming the device with two size types of critical dimensions aresatisfied.

However, in comparison with FIG. 1 and FIG. 2, in the existingtechnology, to form a device with a substantially small criticaldimension, a portion of positions for forming the first target patterns121 is used to form the second target patterns 131. In other words, thesecond target pattern 131 occupies the position in the first maskpattern 120 that is originally used to form the first target pattern121. Therefore, the first mask pattern 120 may have substantially poorpattern density and uniformity, and the second mask pattern 130 may havesubstantially poor density and uniformity. Thus, the stability of theetching process performed with the first mask pattern 120 issubstantially poor, and the stability of the etching process performedwith the second mask pattern 130 is substantially poor.

The present disclosure provides a mask pattern. The mask pattern mayinclude a first mask pattern and a second mask pattern. The first maskpattern may include a plurality of first target patterns, and theplurality of first target patterns may be arranged along a firstdirection. The second mask pattern may include a plurality of secondtarget patterns, and the plurality of second target patterns may bearranged along the first direction. In the first direction, one of theplurality of first target patterns may partially overlap correspondingone of the plurality of second target patterns. The mask pattern mayhave desired pattern density.

FIG. 3 illustrates a schematic structural diagram of a mask patternconsistent with various disclosed embodiments of the present disclosure.Referring to FIG. 3, a mask pattern is provided. The mask pattern mayinclude a first mask pattern 200 and a second mask patterns 300. Thefirst mask pattern 200 may include a plurality of first target patterns210, and the plurality of first target patterns 210 may be arrangedalong a first direction X. The second mask pattern 300 may include aplurality of second target patterns 310, and the plurality of secondtarget patterns 310 may be arranged along the first direction X. Whenthe first mask pattern 200 overlaps the second mask patterns 300, onefirst target pattern 210 may partially overlap corresponding one secondtarget pattern 310.

The first mask pattern 200 may be configured to perform a singleexposure process and a single etching process to form a device with asubstantially large critical dimension. The second mask pattern 300 maybe configured to perform a self-aligned multiple patterning process toform a device with a substantially small critical dimension. Because onefirst target pattern 210 partially overlaps corresponding one secondtarget pattern 310 along the first direction X, the space may be fullyutilized. Therefore, while satisfying that the plurality of first targetpatterns 210 in the first mask pattern 200 have a desired patterndensity, the plurality of second target patterns 310 in the second maskpattern 300 may also have desired pattern density. The detaileddescription may be given below in conjunction with the drawings.

Along the first direction X, each first target pattern 210 may have afirst size W1, and adjacent first target patterns 210 may have a firstdistance L1. Along the first direction X, each second target pattern 310may have a second size W2, and adjacent second target patterns 310 mayhave a second distance L2.

Along the first direction X, a ratio of the size of the overlappedportion of the second target pattern 310 with the first target pattern210 over the first size may be in a range of approximately 40%-60%, anda ratio of the size of the non-overlapped portion of the second targetpattern 310 with the first target pattern 210 over the first distancemay be in a range of approximately 40%-60%.

Because the ratio of the size of the overlapped portion of the secondtarget pattern 310 with the first target pattern 210 over the first sizeW1 is in a range of approximately 40%-60%, and the ratio of the size ofthe non-overlapped portion of the second target pattern 310 with thefirst target pattern 210 over the first distance L1 is in a range ofapproximately 40%-60%, the second mask pattern 300 may be subsequentlyused to perform a self-aligned multiple patterning process to form asidewall spacer, and the first mask pattern 200 may be configured toperform a single exposure process and a single etching process to form amask structure. Therefore, a first portion of the sidewall spacers maybe located between adjacent mask structures, and a second portion of thesidewall spacers may overlap the mask structure. In other words, aprojection of one of the second portion of the sidewall spacers on thesubstrate may be located within a projection of a corresponding maskstructure on the substrate.

At the same time, the second mask pattern 300 may have a desired patterndensity, and the first mask pattern 200 may have a desired patterndensity. The second mask pattern 300 may be configured to perform afirst patterning process, the first mask pattern 200 may be configuredto perform a second patterning process, and, thus, the formed structuremay have a desired pattern density. The sidewall spacer located betweenadjacent mask structures may be ultimately transferred to the substrateto form a device with a substantially small critical dimension anddesired uniformity. The sidewall spacer overlapped with the maskstructure may be ultimately transferred to the substrate using the maskstructure as a mask, to form a device with a substantially largecritical dimension and desired uniformity.

Because the ratio of the size of the overlapped portion of the secondtarget pattern 310 with the first target pattern 210 over the first sizeW1 is in a range of approximately 40%-60%, and the ratio of the size ofthe non-overlapped portion of the second target pattern 310 with thefirst target pattern 210 over the first distance L1 is in a range ofapproximately 40%-60%, the second mask pattern 300 may be subsequentlyused to perform a self-aligned multiple patterning process to form thesidewall spacer. Therefore, a first portion of the sidewall spacers maybe located within the first distance L1, and a second portion of thesidewall spacers may overlap the first target pattern 210. In otherwords, one of the second portion of the sidewall spacers may be locatedwithin a corresponding first target pattern 210.

At the same time, the second mask pattern 300 may have a desired patterndensity, and the first mask pattern 200 may have a desired patterndensity. After the portion of the sidewall spacer overlaps the firsttarget pattern 210 in the first mask pattern 200, the formed structuremay have desired pattern density. The sidewall spacer located within thefirst distance L1 may be ultimately transferred to the substrate to forma device with a substantially small critical dimension and desireduniformity. The sidewall spacer overlapped with the first target pattern210 may be ultimately transferred to the substrate using the firsttarget pattern 210 as a mask, to form a device with a substantiallylarge critical dimension and desired uniformity.

In one embodiment, along the first direction X, the size of theoverlapped portion of the second target pattern 310 with the firsttarget pattern 210 may be approximately ½ of the first size W1, and thesize of the non-overlapped portion of the second target pattern 310 withthe first target pattern 210 may be approximately ½ of the firstdistance L1.

In one embodiment, along the first direction X, the second size W2 maybe in a range of approximately 100 nm-200 nm; and the first size W1 maybe in a range of approximately 100 nm-200 nm. In another embodiment,along the first direction, the second size may be in a range ofapproximately 45 nm-60 nm; and the first size may be in a range ofapproximately 25 nm-45 nm.

The first mask pattern 200 may further include a plurality of first maintarget patterns (not illustrated), and the plurality of first maintarget patterns may be arranged along the first direction X. The secondmask pattern 300 may further include a plurality of second main targetpatterns (not illustrated), and the plurality of second main targetpatterns may be arranged along the first direction.

The first mask pattern may be configured to perform the photolithographyprocess, and the device formed by the first main target pattern may haveelectrical functions, while the device formed by the first targetpattern may not have electrical functions. The first target pattern maybe configured to improve the pattern density of the first mask pattern.

Similarly, the second mask pattern may be configured to perform thephotolithography process, and the device formed by the second maintarget pattern may have electrical functions, while the device formed bythe second target pattern may not have electrical functions. The secondtarget pattern may be configured to improve the pattern density of thesecond mask pattern.

Correspondingly, the present disclosure also provides a method forforming a semiconductor structure. FIG. 13 illustrates a flowchart of amethod for forming the semiconductor structure consistent with variousdisclosed embodiments of the present disclosure, and FIGS. 4-12illustrate semiconductor structures corresponding to certain stages ofthe fabrication method.

As shown in FIG. 13, at the beginning of the fabrication method, asubstrate may be provided (S101). FIG. 4 illustrates a correspondingsemiconductor structure.

Referring to FIG. 4, a substrate 400 may be provided. In one embodiment,the substrate 400 may include a base 401 and a hard mask layer 402 onthe base 401.

In one embodiment, the base 401 may be made of silicon. In anotherembodiment, the base may be made of germanium, silicon germanium,silicon carbide, gallium arsenide, or indium gallium. The hard masklayer 402 may be made of a material including silicon oxide, siliconnitride, titanium nitride, silicon oxy-carbo-nitride, or siliconoxynitride. In one embodiment, the hard mask layer 402 may have asingle-layer structure, and the hard mask layer 402 may be made ofsilicon oxide.

Returning to FIG. 13, after providing the substrate, a sacrificial filmmay be formed (S102). FIG. 5 illustrates a corresponding semiconductorstructure.

Referring to FIG. 5, a sacrificial film 410 may be formed on thesubstrate 400. The sacrificial film 410 may be configured to providematerial for subsequently forming a sacrificial layer.

In one embodiment, the sacrificial film 410 may be formed on the hardmask layer 402. The sacrificial film 410 may be made of a materialincluding amorphous silicon, amorphous carbon, polysilicon, siliconoxide, silicon oxy-carbide, or silicon oxy-carbo-nitride.

Returning to FIG. 13, after forming the sacrificial film, a plurality ofdiscretely arranged sacrificial layers may be formed (S103). FIG. 6illustrates a corresponding semiconductor structure.

Referring to FIG. 6, any one of the above-disclosed mask patterns may beprovided. The second mask pattern 300 may be configured to perform afirst patterning process on the sacrificial film 410 to form a pluralityof discretely arranged sacrificial layers 420. The position and size ofthe plurality of sacrificial layers 420 may correspond to the positionand size of the plurality of second target patterns 310. The sacrificiallayer 420 may be configured to provide support for subsequentlyperforming the self-aligned multiple patterning process to form asidewall spacer.

Because the second mask pattern 300 has desired pattern density, thefirst patterning process performed with the second mask pattern 300 mayhave desired stability and may produce substantially few defects, suchthat the formed pattern may have desired uniformity. In other words, theformed sacrificial layers 420 may have desired size uniformity, and thusthe sidewall spacers subsequently formed on the sidewalls of thesacrificial layers 420 may have desired size uniformity.

Performing the first patterning process on the sacrificial film 410 withthe second mask pattern 300 may include: forming a first photoresist(not illustrated) on the surface of the sacrificial film 410; performingan exposure process on the first photoresist with the second maskpattern to form an initial first patterned layer (not illustrated);performing a development process on the initial first patterned layer toform a first patterned layer; and performing an etching process on thesacrificial film 410 using the first patterned layer as a mask until thesurface of the substrate 400 is exposed to form the sacrificial layer420.

In one embodiment, after forming the sacrificial layer 420, the methodmay further include removing the first patterned layer. Then, a sidewallspacer may be formed on a sidewall surface of the sacrificial layer.

Returning to FIG. 13, after forming the plurality of sacrificial layers,a sidewall spacer material film may be formed (S104). FIG. 7 illustratesa corresponding semiconductor structure.

Referring to FIG. 7, a sidewall spacer material film 430 may be formedon the surface of the substrate 400 and on the top and sidewall surfacesof the sacrificial layer 420. The sidewall spacer material film 430 maybe configured to subsequently form a sidewall spacer.

The sidewall spacer material film 430 may be made of a materialincluding silicon oxide, titanium dioxide, silicon nitride, siliconcarbo-nitride, silicon boron-nitride, silicon oxy-carbo-nitride, orsilicon oxynitride. In one embodiment, the sidewall spacer material film430 may be made of titanium dioxide.

Forming the sidewall spacer material film 430 may include a chemicalvapor deposition process, a physical vapor deposition process, an atomiclayer deposition process, or a combination thereof.

Returning to FIG. 13, after forming the sidewall spacer material film, asidewall spacer may be removed (S105). FIG. 8 illustrates acorresponding semiconductor structure.

Referring to FIG. 8, the sidewall spacer material film 430 may beback-etched until the surface of the substrate 400 and the top surfaceof the sacrificial layer 420 are exposed, to form a sidewall spacer 431on the sidewall surface of the sacrificial layer 420.

A thickness of the sidewall spacer 431 may determine the size ofultimately formed substantially small critical dimension. It should benoted that the thickness of the sidewall spacer 431 may also need to besmaller than a distance between adjacent first target pattern and secondtarget pattern.

Because the sidewall spacer 431 is formed by back-etching the sidewallspacer material film 430, correspondingly, the sidewall spacer 431 maybe made of a material including silicon oxide, titanium dioxide, siliconnitride, silicon carbo-nitride, silicon boron-nitride, siliconoxy-carbo-nitride, or silicon oxynitride. In one embodiment, thesidewall spacer 431 may be made of titanium dioxide.

Returning to FIG. 13, after forming the sidewall spacer, the sacrificiallayer may be removed (S106). FIG. 9 illustrates a correspondingsemiconductor structure.

Referring to FIG. 9, after forming the sidewall spacer 431, thesacrificial layer 420 may be removed. Removing the sacrificial layer 420may include one or more of a dry etching process and a wet etchingprocess. In one embodiment, removing the sacrificial layer 420 mayinclude an anisotropic dry etching process.

Returning to FIG. 13, after removing the sacrificial layer, a mask layermay be formed (S107). FIG. 10 illustrates a corresponding semiconductorstructure.

Referring to FIG. 10, after removing the sacrificial layer 420, a masklayer 440 may be formed on the surface of the substrate 400 and on thetop and sidewall surfaces of the sidewall spacer 431.

A top surface of the mask layer 440 may be above or coplanar with a topsurface of the sidewall spacer 431. The mask layer 440 may provide aflat surface for subsequently performing a second patterning process. Inone embodiment, the top surface of the mask layer 440 may be above thetop surface of the sidewall spacer 431.

The mask layer 440 may be made of a material different from the sidewallspacer 431. The mask layer 440 may be made of a material includingphotoresist or an organic material containing carbon and oxygen. In oneembodiment, the mask layer 440 may be made of an organic materialcontaining carbon and oxygen, and the mask layer 440 may be formed by aspin coating process.

Returning to FIG. 13, after forming the mask layer, a plurality ofdiscretely arranged mask structures may be formed (S108). FIG. 11illustrates a corresponding semiconductor structure.

Referring to FIG. 11, a second patterning process may be performed onthe mask layer 440 with the first mask pattern 200 to form a pluralityof discretely arranged mask structures 450. The position and size of theplurality of mask structures 450 may correspond to the position and sizeof the plurality of first target patterns 210.

In the first mask pattern 200, each of the plurality of first targetpatterns 210 may have the first size W1, and adjacent first targetpatterns 210 may have a first distance L1.

Therefore, the formed mask structure 450 may have the first size W1, andadjacent mask structures 450 may have a first distance L1.

The mask structure 450 may cover at least one sidewall spacer 431; andat least one sidewall spacer 431 may be located between adjacent maskstructures 450. In one embodiment, the mask structure 450 may cover onesidewall spacer 431, and one sidewall spacer 431 may be located betweenadjacent mask structures 450.

The method of using the first mask pattern 200 to perform the secondpatterning process on the mask layer 440 may include: forming a secondphotoresist (not illustrated) on the mask layer 440; performing anexposure process on the second photoresist with the first mask pattern200 to form an initial second patterned layer (not illustrated);performing a development process on the initial second patterned layerto form a second patterned layer (not illustrated); and using the secondpatterned layer as a mask, etching the mask layer 440 until the surfaceof the substrate 400 is exposed to form the mask structure 450.

In one embodiment, the top surface of the mask structure 450 may becoplanar with the top surface of the sidewall spacer 431. In anotherembodiment, the mask structure may cover the top and sidewall surfacesof the sidewall spacer.

The second patterning process may be performed on the mask layer 440with the first mask pattern 200, and the pattern in the first maskpattern 200 may be transferred to the mask layer 440 to form the maskstructure 450. The mask structure 450 and the sidewall spacer 431 maytogether serve as a mask for subsequently etching the substrate 400.

Because the first mask pattern 200 has a desired pattern density, thesecond patterning process performed with the first mask pattern 200 mayhave desired stability and may produce substantially few defects, suchthat the formed pattern may have desired uniformity. In other words, theformed mask structures 450 may have desired size uniformity. Further,the sidewall spacers 431 may have desired size uniformity. Therefore,when performing the second patterning process, the stability of patterntransfer may be improved.

Returning to FIG. 13, after forming the plurality of mask structures,the substrate may be etched (S109). FIG. 12 illustrates a correspondingsemiconductor structure.

Referring to FIG. 12, using the mask structure 450 and the sidewallspacer 431 as a mask, the substrate 400 may be etched. In oneembodiment, using the mask structure 450 and the sidewall spacer 431 asa mask, the hard mask layer 402 and a portion of the base 401 locatedunder the hard mask layer 402 may be etched to achieve the patterntransfer, and to form a semiconductor structure 460. The semiconductorstructure 460 may include a first structure (not illustrated) formed byperforming a pattern transfer using the sidewall spacer 431 as a mask,and a second structure (not illustrated) formed by performing a patterntransfer using the mask structure 450 as a mask. The first structure mayhave a substantially small critical dimension, and the second structuremay have a substantially large critical dimension. Therefore, the formedsemiconductor structure may include a device with two size types ofcritical dimensions.

Because the ratio of the size of the overlapped portion of the secondtarget pattern 310 with the first target pattern 210 over the first sizeW1 is in a range of approximately 40%-60%, and the ratio of the size ofthe non-overlapped portion of the second target pattern 310 with thefirst target pattern 210 over the first distance L1 is in a range ofapproximately 40%-60%, the second mask pattern 300 may be configured toperform a self-aligned multiple patterning process to form the sidewallspacers 431, and the first mask pattern 200 may be configured to performa single exposure process and a single etching process to form the maskstructures 450. Therefore, a first portion of the sidewall spacers 431may be located between adjacent mask structures 450, and a secondportion of the sidewall spacers 431 may overlap the mask structure 450.In other words, a projection of one of the second portion of thesidewall spacers 431 on the substrate 400 may be located within aprojection of a corresponding mask structure 450 on the substrate 400.

At the same time, the second mask pattern 300 may have a desired patterndensity, and the first mask pattern 200 may have a desired patterndensity. The second mask pattern 300 may be configured to perform thefirst patterning process, the first mask pattern 200 may be configuredto perform the second patterning process, and, thus, the formedstructure may have desired pattern density. The sidewall spacer 431located between adjacent mask structures 450 may be ultimatelytransferred to the substrate 400 to form a device with a substantiallysmall critical dimension and desired uniformity. The sidewall spacer 431overlapped with the mask structure 450 may be ultimately transferred tothe substrate 400 using the mask structure 450 as a mask, to form adevice with a substantially large critical dimension and desireduniformity.

Correspondingly, the present disclosure also provides a semiconductorstructure formed by any one of the above-disclosed methods.

The disclosed embodiments may have following beneficial effects. Thepresent disclosure provides a mask pattern. The first mask pattern maybe configured to perform a single exposure process and a single etchingprocess to form a device with a substantially large critical dimension.The second mask pattern may be configured to perform a self-alignedmultiple patterning process to form a device with a substantially smallcritical dimension. Because one first target pattern partially overlapscorresponding one second target pattern along the first direction, thespace may be fully utilized. Therefore, while satisfying that theplurality of first target patterns in the first mask pattern have adesired pattern density, the plurality of second target patterns in thesecond mask pattern may also have desired pattern density.

Because the ratio of the size of the overlapped portion of the secondtarget pattern with the first target pattern over the first size is in arange of approximately 40%-60%, and the ratio of the size of thenon-overlapped portion of the second target pattern with the firsttarget pattern over the first distance is in a range of approximately40%-60%, the second mask pattern may be subsequently used to perform aself-aligned multiple patterning process to form a sidewall spacer, andthe first mask pattern may be configured to perform a single exposureprocess and a single etching process to form a mask structure.Therefore, a first portion of sidewall spacers may be located betweenadjacent mask structures, and a second portion of the sidewall spacersmay overlap the mask structure. In other words, a projection of one ofthe second portion of the sidewall spacers on the substrate may belocated within a projection of a corresponding mask structure on thesubstrate.

At the same time, the second mask pattern may have a desired patterndensity, and the first mask pattern may have a desired pattern density.The second mask pattern may be configured to perform a first patterningprocess, the first mask pattern may be configured to perform a secondpatterning process, and, thus, the formed structure may have a desiredpattern density. The sidewall spacer located between adjacent maskstructures may be ultimately transferred to the substrate to form adevice with a substantially small critical dimension and desireduniformity. The sidewall spacer overlapped with the mask structure maybe ultimately transferred to the substrate using the mask structure as amask, to form a device with a substantially large critical dimension anddesired uniformity.

In the disclosed method for forming the semiconductor structure, becausethe first mask pattern has a desired pattern density, the secondpatterning process performed with the first mask pattern may havedesired stability and may produce substantially few defects, such thatthe formed pattern may have desired uniformity. Because the second maskpattern has desired pattern density, the first patterning processperformed with the second mask pattern may have desired stability andmay produce substantially few defects, such that the formed pattern mayhave desired uniformity. Therefore, the formed semiconductor structuremay have desired device performance.

The above detailed descriptions only illustrate certain exemplaryembodiments of the present disclosure, and are not intended to limit thescope of the present disclosure. Those skilled in the art can understandthe specification as whole and technical features in the variousembodiments can be combined into other embodiments understandable tothose persons of ordinary skill in the art. Any equivalent ormodification thereof, without departing from the spirit and principle ofthe present disclosure, falls within the true scope of the presentdisclosure.

What is claimed is:
 1. A mask pattern, comprising: a first mask pattern,wherein the first mask pattern includes a plurality of first targetpatterns, and the plurality of first target patterns are arranged alonga first direction; a second mask pattern, wherein the second maskpattern includes a plurality of second target patterns, and theplurality of second target patterns are arranged along the firstdirection, wherein: when the first mask pattern overlaps the second maskpattern, one of the plurality of first target patterns partiallyoverlaps a corresponding one of the plurality of second target patterns.2. The mask pattern according to claim 1, wherein: along the firstdirection, each first target pattern has a first size, and adjacent twofirst target patterns are separated by a first distance.
 3. The maskpattern according to claim 2, wherein: along the first direction, eachsecond target pattern has a second size, and adjacent two second targetpatterns are separated by a second distance.
 4. The mask patternaccording to claim 3, wherein: along the first direction, the secondsize is in a range of approximately 45 nm-60 nm, and the first size isin a range of approximately 25 nm-45 nm.
 5. The mask pattern accordingto claim 3, wherein: along the first direction, the second size is in arange of approximately 100 nm-200 nm, and the first size is in a rangeof approximately 100 nm-200 nm.
 6. The mask pattern according to claim3, wherein: along the first direction, a ratio of a size of overlappedportion of the second target pattern with the first target pattern overthe first size is in a range of approximately 40%-60%, and a ratio of asize of non-overlapped portion of the second target pattern with thefirst target pattern over the first distance is in a range ofapproximately 40%-60%.
 7. The mask pattern according to claim 6,wherein: along the first direction, the size of the overlapped portionof the second target pattern with the first target pattern isapproximately ½ of the first size, and the size of the non-overlappedportion of the second target pattern with the first target pattern isapproximately ½ of the first distance.
 8. The mask pattern according toclaim 1, wherein: the first mask pattern further includes a plurality offirst main target patterns, and the plurality of first main targetpatterns are arranged along the first direction.
 9. The mask patternaccording to claim 1, wherein: the second mask pattern further includesa plurality of second main target patterns, and the plurality of secondmain target patterns are arranged along the first direction.